基本信息:
- 专利标题： 냉각판, 그 제조방법 및 반도체 제조 장치용 부재
- 专利标题（英）：Cooling plate, method for manufacturing the same, and member for semiconductor manufacturing apparatus
- 申请号：KR1020147030457 申请日：2014-03-05
- 公开(公告)号：KR1020140140112A 公开(公告)日：2014-12-08
- 发明人： 진도아스미 , 이노우에가츠히로 , 가츠다유지 , 가타이기다카시 , 아마노신고 , 스기모토히로야
- 申请人： 엔지케이 인슐레이터 엘티디
- 申请人地址： *-** Suda-cho, Mizuho-ku, Nagoya-shi, Aichi-ken, ***-**** Japan
- 专利权人： 엔지케이 인슐레이터 엘티디
- 当前专利权人： 엔지케이 인슐레이터 엘티디
- 当前专利权人地址： *-** Suda-cho, Mizuho-ku, Nagoya-shi, Aichi-ken, ***-**** Japan
- 代理人： 김태홍
- 优先权： JPJP-P-2013-052866 2013-03-15
- 国际申请： PCT/JP2014/055665 2014-03-05
- 国际公布： WO2014141974 2014-09-18
- 主分类号： H01L21/683
- IPC分类号： H01L21/683 ; C04B35/565
Semiconductor production apparatus members (10), the alumina of the electrostatic chuck 20, and the cooling plate 30, cooling plate - provided with the chuck joint layer 40. Cooling plate 30, first to third substrates 31 to 33, a first and a second substrate a first metal bonding layer 34 is formed between 31 and 32, and the second and third and a second bonding metal layer 35 and the coolant passage 36 formed between the substrate (32, 33). First to third substrates 31 to 33 is, most often, containing silicon carbide, titanium silicide, it is formed as a dense composite material comprising titanium carbide and silicon carbide titanium. Metal bonding layer (34, 35), the first and second substrates (31, 32) and between the second and third substrate (32, 33) on Al-Si-Mg-based or Al-Mg between the system a bonding material to the sandwiching state of the metal is formed by thermal compression bonding to each of the substrates (31 to 33).
公开/授权文献:
- KR101499409B1 냉각판, 그 제조방법 및 반도체 제조 장치용 부재 公开/授权日：2015-03-05