基本信息:
- 专利标题: 도전막 형성 방법 및 소결 진행제
- 专利标题(英):Method for forming conductive film and sintering promoter
- 专利标题(中):形成导电薄膜和烧结促进剂的方法
- 申请号:KR1020147027741 申请日:2013-02-28
- 公开(公告)号:KR1020140131576A 公开(公告)日:2014-11-13
- 发明人: 카와토유이치 , 마에다유스케 , 쿠도토미오
- 申请人: 이시하라 케미칼 가부시키가이샤
- 申请人地址: *-** Nishiyanagiwara-cho, Hyogo-ku, Kobe-shi, Hyogo ***-****, Japan
- 专利权人: 이시하라 케미칼 가부시키가이샤
- 当前专利权人: 이시하라 케미칼 가부시키가이샤
- 当前专利权人地址: *-** Nishiyanagiwara-cho, Hyogo-ku, Kobe-shi, Hyogo ***-****, Japan
- 代理人: 특허법인원전
- 优先权: JPJP-P-2012-149011 2012-07-03
- 国际申请: PCT/JP2013/055416 2013-02-28
- 国际公布: WO2014006933 2014-01-09
- 主分类号: H01B13/00
- IPC分类号: H01B13/00 ; B22F3/22 ; B22F7/00 ; B22F7/04 ; B22F7/08 ; B22F9/00 ; H05K3/12
In the conductive film forming method using a light sintering, to easily form a membrane of low resistance conductive. A conductive film forming method is a method of using an optical sintered to form a conductive film (5). Step of the method, the film formation onto the layer 22 of the sintering proceeds (2) a liquid film (3) formed of a step, a copper fine particle dispersion to form on the substrate a layer 22 made of a sintered proceeding claim 2 and a step of light sintering step, a copper fine particle layer (4) for drying the liquid film (3) to form a copper particle layer (4). Sintering proceeds (2) is a compound of removing copper oxide from the copper metal. As a result, the process proceeds (2) removes the surface oxide film of the copper fine particles 31 sintered in the optical sintering.
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01B | 电缆;导体;绝缘体;导电、绝缘或介电材料的选择(磁性材料的选择入H01F1/00;波导管入H01P) |
------H01B13/00 | 制造导体或电缆制造的专用设备或方法 |