基本信息:
- 专利标题： 웨이퍼의 양면 연마방법
- 专利标题（英）：Method for polishing both surfaces of wafer
- 专利标题（中）：抛光波形表面的方法
- 申请号：KR1020147022202 申请日：2013-01-30
- 公开(公告)号：KR1020140129001A 公开(公告)日：2014-11-06
- 发明人： 사토,카즈야 , 타나카,유키 , 코바야시,슈이치
- 申请人： 신에쯔 한도타이 가부시키가이샤
- 申请人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人： 특허법인씨엔에스
- 优先权： JPJP-P-2012-030929 2012-02-15; JPJP-P-2012-059341 2012-03-15
- 国际申请： PCT/JP2013/000482 2013-01-30
- 国际公布： WO2013121718 2013-08-22
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; B24B37/08 ; B24B53/00 ; B24B53/12
The present invention, holding the wafer in a holding hole of the carrier and, sandwiched therebetween with a soft to the held wafer cloth patch bottom surface plate, to its axis and about the axis of the carrier polish the both faces of the wafer at the same time, and of the wafer a double side polishing method for a wafer repeatedly polished in batch, according to the polishing of the wafer to repeat the batch type, a double-sided polishing of the wafer to the direction of revolution of the carrier characterized in that the conversion in the opposite direction for each batch . Thereby, while suppressing a reduction in productivity due to dressing, there is provided a double-sided polishing of the wafer to obtain a wafer of high flatness to the stable way.
公开/授权文献:
- KR101846926B1 웨이퍼의 양면 연마방법 公开/授权日：2018-04-10
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |