基本信息:
- 专利标题： 방향성 응고에 의한 캐스트 실리콘 준비 방법
- 专利标题（英）：Method of preparing cast silicon by directional solidification
- 专利标题（中）：通过定向固化法制备硅酸钠的方法
- 申请号：KR1020147023814 申请日：2013-01-28
- 公开(公告)号：KR1020140127281A 公开(公告)日：2014-11-03
- 发明人： 첸,지홍 , 데쉬판데,아디트야
- 申请人： 엠이엠씨 싱가포르 피티이. 엘티디.
- 申请人地址： ** Lorong * Toa Payoh, Block B, Jackson Square, *th Floor, Singapore ******, Singapore
- 专利权人： 엠이엠씨 싱가포르 피티이. 엘티디.
- 当前专利权人： 엠이엠씨 싱가포르 피티이. 엘티디.
- 当前专利权人地址： ** Lorong * Toa Payoh, Block B, Jackson Square, *th Floor, Singapore ******, Singapore
- 代理人： 양영준; 백만기; 정은진
- 优先权： US13/360,116 2012-01-27; US13/360,144 2012-01-27
- 国际申请： PCT/SG2013/000034 2013-01-28
- 国际公布： WO2013112105 2013-08-01
- 主分类号： C03B11/00
- IPC分类号： C03B11/00 ; C30B11/14 ; C30B28/06 ; C30B29/06
2 미만이다. 캐스트 실리콘 결정질 잉곳으로부터 슬라이스된 웨이퍼의 태양 전지 효율은 적어도 17.5 %이며 광 유도 열화는 0.2 % 이하이다.
The preparation method of the cast polycrystalline silicon ingots are provided. Method comprising the steps of: filling a silicon spacer on the bottom surface of the crucible; The method comprising the surface of the single crystal silicon material disposed single-crystal silicon seed crystal to prevent them from coming into contact with the bottom surface of the crucible to the silicon spacers; The step of filling the polycrystalline silicon feedstock to the crucible; And a step of applying heat through at least one opening and at least one side wall to form a portion of the molten silicon in the crucible filling. Crystalline silicon ingot cast does not have a transverse dimension of less than about 5 cm, cast silicon ingot is a crystalline dislocation density is 1 000 dislocations / cm
2 is less than. Solar cell efficiency of the wafer sliced from a crystalline silicon ingot is cast, at least 17.5% and the light induced degradation of more than 0.2%.