基本信息:
- 专利标题： 유기절연체와 유기반도체 사이의 비정질의 금속산화물 층간-박막을 이용한 유기 박막 트랜지스터
- 专利标题（英）：Organic thin-film transistor using amorphous metal oxide interlayer between organic insulator and organic semiconductor
- 专利标题（中）：有机绝缘子与有机半导体之间使用非晶态金属氧化物中间层的有机薄膜晶体管
- 申请号：KR1020130037569 申请日：2013-04-05
- 公开(公告)号：KR1020140121540A 公开(公告)日：2014-10-16
- 发明人： 장광석 , 이미혜 , 가재원 , 김윤호 , 김진수 , 윤준영
- 申请人： 한국화학연구원
- 申请人地址： ***, Gajeong-ro, Yuseong-gu, Daejeon, *****, Republic of Korea
- 专利权人： 한국화학연구원
- 当前专利权人： 한국화학연구원
- 当前专利权人地址： ***, Gajeong-ro, Yuseong-gu, Daejeon, *****, Republic of Korea
- 代理人： 이원희
- 主分类号： H01L51/05
- IPC分类号： H01L51/05 ; H01L51/40 ; H01L29/786
또한, 본 발명에 따른 유기절연체와 유기반도체 사이에 비정질의 금속산화물 층간-박막은 용액공정에 의한 코팅 및 저온의 열처리에 의해 형성될 수 있으므로, 투명-고분자 기판에도 적용이 가능할 뿐만 아니라 비용적으로 경제적이고 공정이 간소하므로 차세대 플렉서블 유기 박막트랜지스터의 제조에 유용하게 사용될 수 있다.
The present invention is the metal oxide layers of the amorphous formed between the organic insulator and organic semiconductor-relates to an improved electrical properties of the organic thin film transistor, a preparation method thereof and an organic thin film transistor using the same using a thin film method, specifically, between the organic insulator and organic semiconductor the metal oxide of the amorphous, for example, of amorphous alumina interlayer-insulating characteristics of the organic insulator by forming a thin film without lowering stand as well as to improve the molecular alignment of the organic semiconductor, an amorphous metal oxide inter-residue for forming a thin film by improving the charge transfer by the precursor materials, to improve the electrical characteristics of the organic thin film transistor, it is effective to eventually improve the performance of the device.
In addition, an amorphous metal oxide between the organic insulator and organic semiconductor according to the present invention inter-thin film can be formed by a coating and a low temperature heat treatment by a solution process, transparency - as well as possible is applied to a polymer substrate of cost Since the process is simple, economical and can be effectively used in the manufacture of the next generation flexible organic thin film transistor.
公开/授权文献:
- KR101451306B1 유기절연체와 유기반도체 사이의 비정질의 금속산화물 층간-박막을 이용한 유기 박막 트랜지스터 公开/授权日：2014-10-17