基本信息:
- 专利标题: 컨포멀한 금속 실리사이드 막들을 형성하는 방법
- 专利标题(英):Method of forming conformal metal silicide films
- 专利标题(中):形成一致的金属硅膜的方法
- 申请号:KR1020147023965 申请日:2013-01-25
- 公开(公告)号:KR1020140119776A 公开(公告)日:2014-10-10
- 发明人: 하세가와도시오 , 다다구니히로 , 야마사키히데아키 , 오메아라데이빗엘 , 루싱크게릿제이
- 申请人: 도쿄엘렉트론가부시키가이샤
- 申请人地址: *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 专利权人: 도쿄엘렉트론가부시키가이샤
- 当前专利权人: 도쿄엘렉트론가부시키가이샤
- 当前专利权人地址: *-* Akasaka *-chome, Minato-ku, Tokyo, Japan
- 代理人: 김태홍
- 优先权: US13/427,343 2012-03-22; US61/591,843 2012-01-27
- 国际申请: PCT/US2013/023303 2013-01-25
- 国际公布: WO2013112941 2013-08-01
- 主分类号: H01L21/24
- IPC分类号: H01L21/24 ; H01L21/205 ; H01L21/8242 ; C23C16/42
A method for forming a metal silicide layer is provided on the substrate. According to one embodiment, this method includes exposing the substrate to the first substrate temperature to a plasma generated from a deposit gas, comprising the step, a metal precursor (metal precursor) providing a substrate in a process chamber, wherein to form a containing layer (conformal metal-containing layer) - the plasma exposure is self-limited process (self-limiting process) conformal metal on a substrate in the. The method also metal to a second substrate temperature in a reducing gas, without the plasma-step of exposing the content layer, and the exposed here are performed at least once alternately to form a metal silicide layer, wherein the deposition gas It does not contain a reducing gas. The method also provides a conformal metal silicide formed within the deep trench having a high aspect ratio.
公开/授权文献:
- KR101631783B1 컨포멀한 금속 실리사이드 막들을 형성하는 방법 公开/授权日:2016-06-17