基本信息:
- 专利标题： 가열 처리 장치
- 专利标题（英）：Heat processing device
- 专利标题（中）：热处理装置
- 申请号：KR1020147020648 申请日：2012-12-25
- 公开(公告)号：KR1020140105859A 公开(公告)日：2014-09-02
- 发明人： 요코타야츠하루
- 申请人： 유겐가이샤 요코타테쿠니카
- 申请人地址： 일본국 도쿄도 하치오지시니부카타마치 ***노 **반치
- 专利权人： 유겐가이샤 요코타테쿠니카
- 当前专利权人： 유겐가이샤 요코타테쿠니카
- 当前专利权人地址： 일본국 도쿄도 하치오지시니부카타마치 ***노 **반치
- 代理人： 장수길; 김명곤; 성재동
- 优先权： JPJP-P-2011-283604 2011-12-26
- 国际申请： PCT/JP2012/083532 2012-12-25
- 国际公布： WO2013099886 2013-07-04
- 主分类号： H05K13/02
- IPC分类号： H05K13/02 ; H05K3/34 ; B23K1/008 ; B23K101/42
The reflow furnace (1) has a pressure chamber 5, the pressure in the chamber 5, the bubbles contained in the molten solder on the substrate 7 is removed. The substrate supported on a first transport rail (8) (7) is fed to the pressure chamber 5 by the first conveying rod 18. Substrate 7 in the vacuum chamber 5 is conveyed to the second is taken out by the transfer rod 32, the second while supported on the carrying rail (9) the outlet of the reflow furnace (1). Prior to that the width processing another substrate 7, the width of the first conveying rail 8 width and the second conveying rail (9) is adjusted for. During this adjustment, the second right and left rail portions (12a within transport and displace the rod 32 in the width direction of the pressure chamber (5) the substrate (7) in which intrusion state in the, accompanying to this vacuum chamber (5) , it is adjusted the distance between 12a).
公开/授权文献:
- KR102032005B1 가열 처리 장치 公开/授权日：2019-10-14
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H05 | 其他类目不包含的电技术 |
| ----H05K | 印刷电路；电设备的外壳或结构零部件；电气元件组件的制造 |
| ------H05K13/00 | 专门适用于制造或调节电元件组装件的设备或方法 |
| --------H05K13/02 | .元件的供给 |