基本信息:
- 专利标题： 전류 저감 구조물들을 갖는 발광 소자들 및 전류 저감 구조물들을 갖는 발광 소자들을 형성하는 방법
- 专利标题（英）：Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
- 专利标题（中）：具有电流减少结构的发光装置和形成具有减少电流结构的发光装置的方法
- 申请号：KR1020147019705 申请日：2008-02-19
- 公开(公告)号：KR1020140103337A 公开(公告)日：2014-08-26
- 发明人： 에머슨데이비드토드 , 해버런케빈 , 버그만마이클존 , 슬라터데이비드 , 도노프리오매튜 , 에드몬드존
- 申请人： 크리 인코포레이티드
- 申请人地址： 미국 노쓰 캐롤라이나 *****-**** 더럼 실리콘 드라이브 ****
- 专利权人： 크리 인코포레이티드
- 当前专利权人： 크리 인코포레이티드
- 当前专利权人地址： 미국 노쓰 캐롤라이나 *****-**** 더럼 실리콘 드라이브 ****
- 代理人： 양영준; 백만기; 정은진
- 优先权： US11/715,687 2007-03-08
- 国际申请： PCT/US2008/002140 2008-02-19
- 国际公布： WO2008112064 2008-09-18
- 主分类号： H01L33/14
- IPC分类号： H01L33/14
A light emitting device includes an active region between the p-type semiconductor layer, an n-type semiconductor layer, and the p-type semiconductor layer and the n-type semiconductor layer. Additional opaque feature such as a wire bonding pad on the p-type semiconductor layer or the n-type is disposed on the p-type semiconductor layer opposite side of the semiconductor layer, the reduced conductivity region is the p-type semiconductor layer or the n-type semiconductor arranged in the layer are aligned with the non-transparent feature portion. The reduced conductivity region is the active region from the n-type semiconductor layer may extend towards the active region from the opposite side surface, or the p-type semiconductor layer opposite side surface of the n-type semiconductor layer of the p-type semiconductor layer the opposite can be extended.