基本信息:
- 专利标题： 콘택 저항의 감소를 위한 자가-정렬된 콘택 금속화
- 专利标题（英）：Self-aligned contact metallization for reduced contact resistance
- 专利标题（中）：自对准接触金属化，降低接触电阻
- 申请号：KR1020147017472 申请日：2011-12-20
- 公开(公告)号：KR1020140097462A 公开(公告)日：2014-08-06
- 发明人： 글라스,글렌에이. , 머시,아난드에스. , 가니,타히르
- 申请人： 인텔 코포레이션
- 申请人地址： **** Mission College Boulevard, Santa Clara, California *****, U.S.A.
- 专利权人： 인텔 코포레이션
- 当前专利权人： 인텔 코포레이션
- 当前专利权人地址： **** Mission College Boulevard, Santa Clara, California *****, U.S.A.
- 代理人： 양영준; 백만기
- 国际申请： PCT/US2011/066134 2011-12-20
- 国际公布： WO2013095377 2013-06-27
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/336
Techniques are disclosed for forming a low contact resistance the transistor device. p- type germanium layer is p- type source / drain regions, and being provided between these respective contact of the metal, n- type III-V semiconductor material layer is n- type source / drain regions and their respective contact metal It is provided between. n- type III-V semiconductor material layer is smaller band gap (for example, <0.5eV) and can have and / or otherwise may be doped to provide the desired conductivity, p- type Ge layer, for example, example, be doped with boron. n- type] After the source / drain regions and depositing a III-V material on all of the germanium cover the p- type source / drain regions, the etch-back process is performed to use the difference in height between the n and p-type region the self-aligned contact-type exposure and a p- type germanium on the p- type region and may (thin) to thin the n- type III-V material on the n- type region. Techniques are planar and non-planar transistors may be used for architecture.
公开/授权文献:
- KR101560112B1 콘택 저항의 감소를 위한 자가-정렬된 콘택 금속화 公开/授权日：2015-10-13
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |