基本信息:
- 专利标题： 성막방법 및 성막장치
- 专利标题（英）：Film formation method and film formation apparatus
- 申请号：KR1020147008105 申请日：2012-09-26
- 公开(公告)号：KR1020140074310A 公开(公告)日：2014-06-17
- 发明人： 시오노이치로 , 하야시다츠야 , 지앙유송 , 나가에에키슈 , 미야우치미츠히로 , 사모리싱고
- 申请人： 신크론 컴퍼니 리미티드
- 申请人地址： *-*, Minato Mirai *-chome, Nishi-ku, Yokohama-shi, Kanagawa, JAPAN
- 专利权人： 신크론 컴퍼니 리미티드
- 当前专利权人： 신크론 컴퍼니 리미티드
- 当前专利权人地址： *-*, Minato Mirai *-chome, Nishi-ku, Yokohama-shi, Kanagawa, JAPAN
- 代理人： 서종완
- 优先权： JPPCT/JP2011/072586 2011-09-30; JPPCT/JP2012/053099 2012-02-10; JPPCT/JP2012/069714 2012-08-02
- 国际申请： PCT/JP2012/074755 2012-09-26
- 国际公布： WO2013047605 2013-04-04
- 主分类号： C23C14/00
- IPC分类号： C23C14/00 ; C23C14/02 ; C23C14/24 ; C23C14/54 ; C23C14/58
It is capable of withstanding practical use as well as providing a film forming apparatus capable of efficiently formed by the antifouling film is higher than the wear resistance capability. In the plurality of substrates 14, a substrate holder 12 having a substrate holding surface for holding a rotatably arranged in the vacuum chamber 10, a film-forming device (1), rotating a substrate holder of when the stop (12 ) if it is running toward the other area other than the first region on the first region (A3) a partial area of the gas-holding surface (the other area) than the configuration becomes possible for large amount of the deposition material supplying vacuum chamber 10 and the evaporation source 34 is provided in, if it is running toward the substrate holder 12 of when the rotation stops, the opposite only in the second area (A2) a part of the gas-holding surface energy particles is irradiated a film-forming apparatus 1 of a configuration having an ion source 38 provided in the vacuum chamber 10 as becomes possible configuration, arrangement and / or orientation.