基本信息:
- 专利标题: 반도체 장치 및 그 제조 방법
- 专利标题(英):Semiconductor device and manufacturing method the same
- 专利标题(中):半导体器件及其制造方法相同
- 申请号:KR1020147010923 申请日:2010-06-21
- 公开(公告)号:KR1020140059306A 公开(公告)日:2014-05-15
- 发明人: 야마자끼슌뻬이 , 오하라히로끼 , 사까따준이찌로 , 사사끼도시나리 , 호소바미유끼
- 申请人: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 申请人地址: 일본국 가나가와켄 아쓰기시 하세 ***
- 专利权人: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人地址: 일본국 가나가와켄 아쓰기시 하세 ***
- 代理人: 장수길; 박충범; 이중희
- 优先权: JPJP-P-2009-164197 2009-07-10
- 国际申请: PCT/JP2010/060931 2010-06-21
- 国际公布: WO2011004723 2011-01-13
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
The purpose of having a reliable thin film transistor having stable electric characteristics and provide high manufacturing a semiconductor device. The method of manufacturing a semiconductor device including a thin film transistor serving as a semiconductor layer including a channel formation region membrane oxide semiconductor, after the oxide insulating film for a protective role formed in contact with the oxide semiconductor layer, heat for reducing the impurities, such as water treatment (heat treatment for dehydration or dehydrogenation) is carried out. Then, in addition, within the insulation, the gate electrode layer-bed drain, source electrode layer and an oxide semiconductor membrane, impurities and moisture existing in the interface between the oxide semiconductor and the oxide films are provided in contact with the upper and lower layer of the semiconductor film is reduced.
公开/授权文献:
- KR101642620B1 반도체 장치 및 그 제조 방법 公开/授权日:2016-07-25