基本信息:
- 专利标题： AlN 기판 및 그 제조 방법
- 专利标题（英）：Aln substrate and method for producing same
- 专利标题（中）：ALN基板及其制造方法
- 申请号：KR1020137030519 申请日：2012-07-04
- 公开(公告)号：KR1020140047607A 公开(公告)日：2014-04-22
- 发明人： 야마모토타케히사 , 이시즈사다무
- 申请人： 가부시끼가이샤 아라이도 마테리아루
- 申请人地址： 일본 도꾜도 미나또꾸 시바 *쪼메 **방 **고
- 专利权人： 가부시끼가이샤 아라이도 마테리아루
- 当前专利权人： 가부시끼가이샤 아라이도 마테리아루
- 当前专利权人地址： 일본 도꾜도 미나또꾸 시바 *쪼메 **방 **고
- 代理人： 하영욱
- 优先权： JPJP-P-2011-155856 2011-07-14
- 国际申请： PCT/JP2012/067100 2012-07-04
- 国际公布： WO2013008697 2013-01-17
- 主分类号： C04B35/581
- IPC分类号： C04B35/581 ; C04B35/645
The excellent heat transfer efficiency between the AlN substrate and the other member such as a semiconductor substrate is joined to the joint surface, and the AlN substrate provides a method for the production. AlN substrate is a group 2A element, a Group 3A the major axis of the long diameter of an average value of more than 0.25㎛ voids exposed to is made of the AlN sintered body, the surface roughness (Ra) of the contact surface is 3㎚ or less, the bonding surfaces containing an element and 1.5㎛ or less, is not more than the maximum value 1.8㎛. Manufacturing method is formed by sintering a material containing from 0.01 to 0.3 mass%, and 3A group elements of the group 2A element AlN 88.7 to 98.5% by mass, in terms of oxides in the range of 0.05 to 5% by weight in terms of oxides the precursor 1500 by sintering at a temperature of ~1900 ℃ form a sintered body, and the HIP treating the sintered body at a temperature and a pressure of at least 9.8㎫ of 1450~2000 ℃.
公开/授权文献:
- KR101705024B1 AlN 기판 및 그 제조 방법 公开/授权日：2017-02-09