基本信息:
- 专利标题： PVD-형성된 알루미늄 질화물 버퍼 층을 갖는 갈륨 질화물-기반 LED 제조
- 专利标题（英）：Gallium nitride-based led fabrication with pvd-formed aluminum nitride buffer layer
- 专利标题（中）：基于氮化镓的LED制造与PVD成型的氮化铝缓冲层
- 申请号：KR1020137018159 申请日：2011-12-13
- 公开(公告)号：KR1020140031851A 公开(公告)日：2014-03-13
- 发明人： 즈후,밍웨이 , 아그라왈비벡 , 패티반들라,나그,비. , 나라마수,옴카람
- 申请人： 어플라이드 머티어리얼스, 인코포레이티드
- 申请人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US13/036,273 2011-02-28; US61/424,006 2010-12-16
- 国际申请： PCT/US2011/064722 2011-12-13
- 国际公布： WO2012082788 2012-06-21
- 主分类号： H01L21/203
- IPC分类号： H01L21/203 ; H01L33/12
Physical vapor deposition (PVD) formed of aluminum nitride buffer layers having a gallium nitride-based manufacturing of the light emitting diode (LED) is described. For example, the multi-chamber system comprises a physical vapor deposition (PVD) chamber having a target made of aluminum. The chamber is also included, which is not doped or n- type gallium nitride, or is adapted to deposit the two. And a step of forming an aluminum nitride layer on the substrate in a physical vapor deposition (PVD) chambers of the chamber system - In another example, the method of manufacturing a light emitting diode (LED) structure, a multi. Type non-doped or n- gallium nitride layer is multi-layer is formed on the aluminum nitride in the second chamber of the chamber system.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/203 | .....应用物理沉积的，例如真空沉积，溅射 |