基本信息:
- 专利标题： 실리콘 융액 접촉 부재, 그의 제조 방법 및 결정 실리콘의 제조 방법
- 专利标题（英）：Silicon melt contacting member and process for production thereof, and process for production of crystalline silicon
- 专利标题（中）：硅胶接触件及其生产工艺及其制造方法
- 申请号：KR1020137007465 申请日：2012-01-26
- 公开(公告)号：KR1020140004067A 公开(公告)日：2014-01-10
- 发明人： 코마츠,류이치 , 이토,히로노리 , 아주마,마사노부
- 申请人： 고쿠리츠다이가쿠호우진 야마구치 다이가쿠 , 가부시끼가이샤 도꾸야마
- 申请人地址： ****-*, Yoshida, Yamaguchi-shi, Yamaguchi-ken, Japan
- 专利权人： 고쿠리츠다이가쿠호우진 야마구치 다이가쿠,가부시끼가이샤 도꾸야마
- 当前专利权人： 고쿠리츠다이가쿠호우진 야마구치 다이가쿠,가부시끼가이샤 도꾸야마
- 当前专利权人地址： ****-*, Yoshida, Yamaguchi-shi, Yamaguchi-ken, Japan
- 代理人： 장수길; 위혜숙
- 优先权： JPJP-P-2011-013681 2011-01-26; JPJP-P-2011-189677 2011-08-31
- 国际申请： PCT/JP2012/051669 2012-01-26
- 国际公布： WO2012102343 2012-08-02
- 主分类号： C30B11/00
- IPC分类号： C30B11/00 ; C30B29/06 ; C01B33/02
The present invention is to significantly increase the liquid repellency of the silicon melt, yet capable of permanently sustained in its liquid-repellency, provide the desired silicon melt contact members on silicon production, and the crystal silicon, in particular by the silicon melt contact member It provides a method for efficient production of the silicon of the highly-crystallized spherical. The silicon melt in contact member according to the present invention includes a plurality of pores, preferably at least a hole occupied area ratio of 30 to 80%, the dispersion average circle equivalent diameter of 1 to 25 ㎛ size holes in, and each hole is connected to the depth 5 ㎛ to which a communication hole is formed, and the porous sintered layer having a thickness of 10 to 500 ㎛ composed mainly of silicon nitride which is present on the surface, is suitable for the sintered product layer is present on a ceramic substrate such as aluminum nitride.