基本信息:
- 专利标题: 반도체 기판용 알칼리성 처리액의 정제방법 및 정제장치
- 专利标题(英):Refining method for alkaline treatment fluid for semiconductor substrate and refining device
- 专利标题(中):用于半导体基板和精制装置的碱处理流体的精制方法
- 申请号:KR1020137010597 申请日:2011-09-26
- 公开(公告)号:KR1020130139945A 公开(公告)日:2013-12-23
- 发明人: 무라오카히사시 , 쵸토시츠라
- 申请人: 다마 가가쿠 고교 가부시키가이샤 , 유겐가이샤 유에무에스
- 申请人地址: *-*, Higashidacho, Kawasaki-ku, Kawasaki City, Kanagawa ***-**** Japan
- 专利权人: 다마 가가쿠 고교 가부시키가이샤,유겐가이샤 유에무에스
- 当前专利权人: 다마 가가쿠 고교 가부시키가이샤,유겐가이샤 유에무에스
- 当前专利权人地址: *-*, Higashidacho, Kawasaki-ku, Kawasaki City, Kanagawa ***-**** Japan
- 代理人: 윤동열
- 优先权: JPJP-P-2010-230962 2010-09-27
- 国际申请: PCT/JP2011/071928 2011-09-26
- 国际公布: WO2012043496 2012-04-05
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; B01J20/10 ; C02F1/28
Various alkaline processing liquid used to process a semiconductor substrate for a variety of purposes, to the ultra-high purity, in particular it is possible to purify the Fe concentration to a ppq region, and chemical resistance and mechanical strength of the semiconductor using the excellent adsorption purification means It provides the purification method and purification apparatus of an alkaline treatment liquid for a substrate. For a variety of purposes in the fabrication of a semiconductor substrate or a semiconductor device with means for purification of the alkaline processing liquid for processing a semiconductor substrate, contacting an alkaline processing solution in the silicon carbide crystal face of the adsorption purification means, for example, on both sides, CVD SiC flushed in the gap of the attraction plate laminated body (2) of the surface, the purification method and purification apparatus of an alkaline treatment liquid for a semiconductor substrate to remove metal impurities adsorbed on the crystal plane of silicon carbide contained in the alkaline processing liquid.
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |