基本信息:
- 专利标题： 단결정 기판의 제조 방법 및 내부 개질층 형성 단결정 부재의 제조 방법
- 专利标题（英）：Production method for monocrystalline substrate and production method for monocrystalline member with modified layer formed therein
- 专利标题（中）：单晶衬底的生产方法及其形成改性层的单晶构件的生产方法
- 申请号：KR1020137021347 申请日：2011-02-10
- 公开(公告)号：KR1020130103623A 公开(公告)日：2013-09-23
- 发明人： 구니시요스케 , 스즈키히데키 , 마츠오리카 , 이케노준이치
- 申请人： 신에츠 폴리머 가부시키가이샤 , 고쿠리츠다이가쿠호진 사이타마 다이가쿠
- 申请人地址： *-* Kanda-Sudacho, Chiyoda-ku, Tokyo, Japan
- 专利权人： 신에츠 폴리머 가부시키가이샤,고쿠리츠다이가쿠호진 사이타마 다이가쿠
- 当前专利权人： 신에츠 폴리머 가부시키가이샤,고쿠리츠다이가쿠호진 사이타마 다이가쿠
- 当前专利权人地址： *-* Kanda-Sudacho, Chiyoda-ku, Tokyo, Japan
- 代理人： 리앤목특허법인
- 国际申请： PCT/JP2011/052949 2011-02-10
- 国际公布： WO2012108054 2012-08-16
- 主分类号： H01L21/268
- IPC分类号： H01L21/268 ; H01L21/02 ; B23K26/08
To provide a relatively large and thin single-crystal substrate manufacturing method in the single crystal substrate can be easily manufactured and the inner reforming layer forming a single crystal member to challenge. In step, a single crystal member 10 is disposed in a non-contact manner, the light converging lens 15 which corrects the aberration resulting from the refractive index of the emitting hereinafter as well as a single crystal member (10) with a laser beam (B) on a single crystal member 10 the surface (10t) is irradiated with laser light by relative movement of the step and the condenser lens 15 and the single crystal member (10) for converging the laser light within the single crystal member in the interior of the single crystal member 10 is modified on the two-dimensional and the step of forming the layer 12, by peeling the single crystal layer which is divided by a modification layer (12) from the modified layer 12, a step of forming a single crystal substrate.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/263 | .....带有高能辐射的 |
| ------------------H01L21/268 | ......应用电磁辐射的，例如激光辐射 |