基本信息:
- 专利标题： 고체 물질로부터 화합물 또는 그의 중간체를 제조하기 위한 장치 및 방법, 및 이러한 화합물과 중간체를 사용하는 방법
- 专利标题（英）：Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
- 专利标题（中）：从固体材料中制备化合物或其中间体的装置和方法，以及使用这些化合物和中间体
- 申请号：KR1020137007776 申请日：2011-08-28
- 公开(公告)号：KR1020130101035A 公开(公告)日：2013-09-12
- 发明人： 바일올레그 , 존스에드워드이 , 파이디치란지비 , 스위니조셉디
- 申请人： 엔테그리스, 아이엔씨.
- 申请人地址： *** Concord Road, Billerica, Massachusetts *****, U.S.A.
- 专利权人： 엔테그리스, 아이엔씨.
- 当前专利权人： 엔테그리스, 아이엔씨.
- 当前专利权人地址： *** Concord Road, Billerica, Massachusetts *****, U.S.A.
- 代理人： 제일특허법인
- 优先权： US61/378,375 2010-08-30
- 国际申请： PCT/US2011/049473 2011-08-28
- 国际公布： WO2012030679 2012-03-08
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
Producing the intermediate product has a device comprising an opening for the export of the unreacted part and the intermediate product in the reaction zone and the gas phase reagent for contacting the reactant gas with a reactive solid from the reaction zone as described under conditions effective to. A reaction product of an intermediate product and reactant gas can be advantageously used for the apparatus for producing an end product. It is possible to carry out the reaction of the reagent gas and the reactive solid in a first reaction zone, it is possible to carry out the reaction of the reagent gas and the intermediate product in a second reaction zone. In a particular execution, the reactant gas and the intermediate product is reversible reaction, and the reactant gas and the intermediate product is to flow to a second reaction zone with a controlled rate or controlled to suppress the reverse reaction to form the reactive solid.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/263 | .....带有高能辐射的 |
| ------------------H01L21/265 | ......产生离子注入的 |