基本信息:
- 专利标题： 반도체 박막소자용 투명전극
- 专利标题（英）：Transparent electrodes for semiconductor thin film devices
- 专利标题（中）：用于半导体薄膜器件的透明电极
- 申请号：KR1020127034403 申请日：2011-06-30
- 公开(公告)号：KR1020130095662A 公开(公告)日：2013-08-28
- 发明人： 해턴,로스,앤드류 , 스텍,헬레나,마리아 , 존스,티모시,시몬
- 申请人： 유니버시티 오브 워위크
- 申请人地址： Coventry, Warwickshire, CV* *AL, United Kingdom
- 专利权人： 유니버시티 오브 워위크
- 当前专利权人： 유니버시티 오브 워위크
- 当前专利权人地址： Coventry, Warwickshire, CV* *AL, United Kingdom
- 代理人： 특허법인이지
- 优先权： GB10111185 2010-06-30
- 国际申请： PCT/GB2011/051245 2011-06-30
- 国际公布： WO2012001424 2012-01-05
- 主分类号： H01L51/44
- IPC分类号： H01L51/44
Process for producing a transparent electrode suitable for use in the organic semiconductor optoelectronic devices. The first and the second silane (3) is deposited on the substrate 1 from the base body engages the surface of the substrate. A metal film (4) is deposited from the gas phase is combined with both the first and second silanes to prepare since the transparent metal layer has a thickness of about 15 nm or less. Wherein the first silane is a non-amino-functional silane and the second silane is an amino-functional silane. Using the polymer substrate (1) electrode can be flexible. The metal film 4, for example to mask the substrate containing the microspheres (2) during the deposition of the metal, that is provided by annealing the metal in order to occur continuously removing the microspheres and / or hole , a number of holes 5 may be provided.