基本信息:
- 专利标题： 탄화규소 기판의 제조 방법 및 제조 장치
- 专利标题（英）：Silicon carbide substrate manufacturing method and manufacturing device
- 专利标题（中）：碳化硅基板制造方法和制造装置
- 申请号：KR1020127010056 申请日：2011-01-07
- 公开(公告)号：KR1020130092945A 公开(公告)日：2013-08-21
- 发明人： 이노우에히로키 , 하라다신 , 사사키마코토 , 니시구치다로 , 오키타교코 , 나미카와야스오
- 申请人： 스미토모덴키고교가부시키가이샤
- 申请人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 代理人： 강승옥; 송승필
- 优先权： JPJP-P-2010-140768 2010-06-21
- 国际申请： PCT/JP2011/050142 2011-01-07
- 国际公布： WO2011161976 2011-12-29
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L29/12 ; H01L21/02
Laminate process, a first single crystal with each of the first base board (30a) of the board group (10a) reports the facing each other, respectively, and the second base substrate of the second single crystal substrate of the group (10b) to prepare (TX) ( 30b) are facing each other, a first single crystal substrate of groups (10a) and the first one-way base plate (30a) and the insert part (60X) and the second single crystal substrate of groups (10b) and second base board (30b) is towards the stacking is carried out such that overlap in this order. Next, the temperature of the laminate (TX) silicon carbide is, to reach to the sublimation temperature also laminate (TX) such that the temperature is formed with a rising temperature gradient toward the one direction in the layered product (TX) is heated do. This makes it possible to efficiently produce the silicon carbide substrate (81) with.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |