基本信息:
- 专利标题： 금속 게이트 구조들 및 그 형성 방법들
- 专利标题（英）：Metal gate structures and methods for forming thereof
- 专利标题（中）：金属门结构及其形成方法
- 申请号：KR1020137000162 申请日：2011-05-27
- 公开(公告)号：KR1020130087482A 公开(公告)日：2013-08-06
- 发明人： 강울리,세사드리 , 유,상호 , 이,상-협 , 하,형-찬 , 리,웨이티 , 김,훈 , 간디코타,스리니바스 , 레이,유 , 모라에스,케빈 , 탕,시안민
- 申请人： 어플라이드 머티어리얼스, 인코포레이티드
- 申请人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US13/116,794 2011-05-26; US61/351,678 2010-06-04
- 国际申请： PCT/US2011/038357 2011-05-27
- 国际公布： WO2011153095 2011-12-08
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
Metal gate structure and the formation methods are provided herein. In some embodiments, the method for forming a metal gate structure on a substrate with a feature formed on the high dielectric constant dielectric layer comprises the steps of: depositing a first layer in the feature above the dielectric layer; Depositing a second layer comprising cobalt or nickel in the interior of the feature on said first layer; And may include the step of depositing a third layer including a metal on the feature inside the above said second layer to fill the feature at least one of the first layer or the second layer is subsequently deposited forming a wetting layer to form a nucleation layer for the layer, wherein the first layer, one of said second layer or said third layer forms a work function layer, said third layer forms the gate electrode.
公开/授权文献:
- KR101894903B1 금속 게이트 구조들 및 그 형성 방법들 公开/授权日：2018-10-18
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |