基本信息:
- 专利标题: 수직 인라인 화학기상증착 시스템
- 专利标题(英):Vertical inline cvd system
- 专利标题(中):垂直直插式化学气相沉积系统
- 申请号:KR1020127031556 申请日:2011-04-29
- 公开(公告)号:KR1020130057441A 公开(公告)日:2013-05-31
- 发明人: 쿠리타,시니치 , 쿠델라,요제프 , 안와르,수하일 , 화이트,존엠. , 임,동-길 , 울프,한스 , 즈발로,데니스 , 이나가와,마코토 , 모리,이쿠오
- 申请人: 어플라이드 머티어리얼스, 인코포레이티드
- 申请人地址: **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 专利权人: 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人: 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人地址: **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 代理人: 특허법인 남앤드남
- 优先权: US61/330,296 2010-04-30; US61/354,230 2010-06-13; US61/416,532 2010-11-23
- 国际申请: PCT/US2011/034623 2011-04-29
- 国际公布: WO2011137373 2011-11-03
- 主分类号: C23C16/50
- IPC分类号: C23C16/50 ; C23C16/44 ; H01L21/205
Embodiment of the present invention generally relates to a vertical chemical vapor deposition (CVD) system. Although a plurality of substrates are placed on opposite sides of the processing source in the processing chamber, the process atmosphere are not isolated from each other. Processing the source is a plasma generator vertically centered in the horizontal, such a plasma generator at the same time a plurality of substrates on either side of the plasma generator, however, allow one another can be processed independently. This system is arranged as a twin system, whereby two identical processing line has its own processing chamber, respectively, are arranged close to each other. Using a plurality of robot loads the substrate into the processing system, and unloading the substrate from the processing system. Each robot may have access to both processing lines in the system.
公开/授权文献:
- KR101796656B1 수직 인라인 화학기상증착 시스템 公开/授权日:2017-11-13