基本信息:
- 专利标题: 박막 트랜지스터의 제조 방법 및 박막 트랜지스터 및 화상 표시 장치
- 专利标题(英):Method for producing thin film transistor, and thin film transistor and image display device
- 专利标题(中):用于生产薄膜晶体管的方法,以及薄膜晶体管和图像显示装置
- 申请号:KR1020127025465 申请日:2011-03-01
- 公开(公告)号:KR1020130050914A 公开(公告)日:2013-05-16
- 发明人: 이께다,노리아끼 , 미야자끼,지히로 , 이또,마나부
- 申请人: 도판 인사츠 가부시키가이샤
- 申请人地址: *-*, Taito *-chome, Taito-ku, Tokyo, Japan
- 专利权人: 도판 인사츠 가부시키가이샤
- 当前专利权人: 도판 인사츠 가부시키가이샤
- 当前专利权人地址: *-*, Taito *-chome, Taito-ku, Tokyo, Japan
- 代理人: 장수길; 박충범
- 优先权: JPJP-P-2010-078573 2010-03-30; JPJP-P-2010-078575 2010-03-30
- 国际申请: PCT/JP2011/054639 2011-03-01
- 国际公布: WO2011122205 2011-10-06
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/786 ; G02F1/1368
The present invention provides a first step of forming a gate electrode on the invention, the substrate described in that for providing a manufacturable thin film transistor, and an image display device to reduce the number of manufacturing processes, and simplify, claim 1 of the present invention, 4 to form a second step, a third step, a semiconductor layer contacting the source electrode and the drain electrode to form a source electrode and a drain electrode on the gate insulating film to form the gate insulating film to cover the gate electrode characterized in that the step and the fifth step of forming the very protective film from above so as to overlap a portion of the source electrode and the drain electrode of the semiconductor layer, and the protective film as a mask having a sixth step of performing patterning of the semiconductor layer, to a method for producing the thin film transistor.
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/335 | .....场效应晶体管 |
------------------H01L21/336 | ......带有绝缘栅的 |