基本信息:
- 专利标题： 탄화규소 기판, 에피택셜층을 갖는 기판, 반도체 장치 및 탄화규소 기판의 제조 방법
- 专利标题（英）：Silicon carbide substrate, epitaxial layer provided substrate, semiconductor device, and method for manufacturing silicon carbide substrate
- 专利标题（中）：硅碳化硅基板，外延层基板，半导体器件及制造碳化硅基板的方法
- 申请号：KR1020117030353 申请日：2011-02-21
- 公开(公告)号：KR1020130031182A 公开(公告)日：2013-03-28
- 发明人： 시오미히로무 , 다마소히데토 , 하라다신 , 츠노다카시 , 나미카와야스오
- 申请人： 스미토모덴키고교가부시키가이샤
- 申请人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 代理人： 김태홍; 신정건
- 优先权： JPJP-P-2010-132253 2010-06-09
- 国际申请： PCT/JP2011/053720 2011-02-21
- 国际公布： WO2011155234 2011-12-15
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
The present invention provides a method of manufacturing a substrate, a semiconductor device and a silicon carbide substrate that has a silicon carbide substrate, an epitaxial layer capable of reducing the on-resistance. A silicon carbide substrate 10, a silicon carbide substrate 10 having a major surface, SiC single crystal substrate (1) formed on at least a portion of the main surface and, SiC single crystal substrate (1) a base member disposed to surround the periphery of the and a 20. The base member 20 comprises an area 12 and not, the border region 11. A border area 11 is adjacent to the SiC single crystal substrate (1) in accordance with the main surface direction, and has the grain boundaries therein. No area 12, adjacent to the SiC single crystal substrate (1) in a direction perpendicular to the main surface, and has a higher impurity concentration than the impurity concentration in the SiC single crystal substrate (1).
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |