基本信息:
- 专利标题： 에피택셜 성장용 템플릿의 제작 방법 및 질화물 반도체 장치
- 专利标题（英）：Method of producing template for epitaxial growth and nitride semiconductor device
- 专利标题（中）：生产用于外源生长和氮化物半导体器件的模板的方法
- 申请号：KR1020127030513 申请日：2010-06-07
- 公开(公告)号：KR1020120139855A 公开(公告)日：2012-12-27
- 发明人： 김명희
- 申请人： 소코 가가쿠 가부시키가이샤
- 申请人地址： *-*-*, Asahigaoka, Hakusan-shi, Ishikawa, Japan
- 专利权人： 소코 가가쿠 가부시키가이샤
- 当前专利权人： 소코 가가쿠 가부시키가이샤
- 当前专利权人地址： *-*-*, Asahigaoka, Hakusan-shi, Ishikawa, Japan
- 代理人： 특허법인코리아나
- 国际申请： PCT/JP2010/059589 2010-06-07
- 国际公布： WO2011155010 2011-12-15
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205 ; H01L33/32
x Ga
1
-
x N (0001) 층 (1＞x＞0) 으로 이루어지는 제 2 ELO 층을 에피택셜 성장시키고, 제 1 ELO 층의 상면으로부터 가로 방향 성장한 상기 제 2 ELO 층에 의해 오목부 상방 영역을 완전히 덮는다.
The protrusion top portion a flat surface, and the concave-convex processing the sapphire so that the predetermined plane in the pattern (0001) substrate, subjected to C-axis orientation control so as to grow the AlN layer C +-axis oriented on the flat surface except for an edge portion of the convex section top to, to add a new recess formed in the recess epitaxially growing an initial AlN layer and, on the initial AlN layer, using a horizontal orientation growth method AlN (0001) layer epitaxially grown the claim 1 ELO layer made of and a new the recess upper area which is located in the recess above, before being completely covered by the claim 1 ELO layer grown direction horizontally from the convex portions the top surface of the initial AlN layer, to stop the growth of the 1 ELO layer, onto the 1 ELO layer , the transverse direction growth method using the Al
x Ga
1
-
x N (0001) layer (1> x> 0) as formed claim 2 ELO layer epitaxial growth and, claim 1 ELO layer of the top surface from the horizontal orientation grown wherein 2 completely covers the area above the recesses by the ELO layer.
公开/授权文献:
- KR101245894B1 에피택셜 성장용 템플릿의 제작 방법 및 질화물 반도체 장치 公开/授权日：2013-03-20
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |