基本信息:
- 专利标题: 리세스된 반도체 기판
- 专利标题(英):Recessed semiconductor substrates
- 专利标题(中):残留的半导体衬底
- 申请号:KR1020127015804 申请日:2011-01-25
- 公开(公告)号:KR1020120135897A 公开(公告)日:2012-12-17
- 发明人: 우알버트 , 첸로아웬 , 한충청 , 리우쉬안-밍 , 웨이치엔-추안 , 창룬지 , 우스코트 , 쳉추안-쳉
- 申请人: 마벨 월드 트레이드 리미티드
- 申请人地址: L'Horizon, Gunsite Road, Brittons Hill, St. Michael, Barbados BB*****
- 专利权人: 마벨 월드 트레이드 리미티드
- 当前专利权人: 마벨 월드 트레이드 리미티드
- 当前专利权人地址: L'Horizon, Gunsite Road, Brittons Hill, St. Michael, Barbados BB*****
- 代理人: 박장원
- 优先权: US13/012,644 2011-01-24; US61/301,125 2010-02-03; US61/316,282 2010-03-22; US61/321,068 2010-04-05; US61/325,189 2010-04-16
- 国际申请: PCT/US2011/022370 2011-01-25
- 国际公布: WO2011097089 2011-08-11
- 主分类号: H01L23/13
- IPC分类号: H01L23/13 ; H01L23/14 ; H01L23/498 ; H01L23/367 ; H01L25/065 ; H01L23/00 ; H01L25/04
Embodiment of the present invention provides an apparatus, the apparatus is a second surface on the other side of the semiconductor substrate, and said first surface of said semiconductor substrate includes a first surface, comprising: a die coupled to the semiconductor substrate, and having one or more vias, and at least a portion of the first surface is recessed to form a recessed area recess of the semiconductor substrate, wherein the one or more vias of the semiconductor is formed in the region of the recess of the semiconductor substrate, provides an electrical path or thermal path between the second surface and the first surface of the substrate, the die is electrically coupled to the at least one via formed in the region of the recess of the semiconductor substrate. Other embodiments described and / or claimed.
公开/授权文献:
- KR101830904B1 리세스된 반도체 기판 公开/授权日:2018-02-22
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L23/00 | 半导体或其他固态器件的零部件 |
--------H01L23/02 | .容器;封接 |
----------H01L23/13 | ..按形状特点进行区分的 |