基本信息:
- 专利标题： 반도체 장치
- 专利标题（英）：Semiconductor device
- 申请号：KR1020127022401 申请日：2011-01-20
- 公开(公告)号：KR1020120118485A 公开(公告)日：2012-10-26
- 发明人： 이토신고
- 申请人： 스미토모 베이클리트 컴퍼니 리미티드
- 申请人地址： *-*, HIGASHISHINAGAWA-*-CHOME, SHINAGAWA-KU, TOKYO, JAPAN
- 专利权人： 스미토모 베이클리트 컴퍼니 리미티드
- 当前专利权人： 스미토모 베이클리트 컴퍼니 리미티드
- 当前专利权人地址： *-*, HIGASHISHINAGAWA-*-CHOME, SHINAGAWA-KU, TOKYO, JAPAN
- 代理人： 특허법인태평양
- 优先权： JPJP-P-2010-014919 2010-01-27
- 国际申请： PCT/JP2011/000286 2011-01-20
- 国际公布： WO2011093038 2011-08-04
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/31
The present invention relates to a semiconductor device including a bonding wire for connecting semiconductor elements, mounting the semiconductor element and the substrate is electrically joined member is formed, the electrode pad and electrically joined member with the electrode pad electrically. A semiconductor device and a main component metal of the electrode pad of the present invention is either the same metal as the main component metal of the bonding wire different from the main component metal of the bonding wire, when the main component metal of the electrode pads in the main metal components of the bonding wire and the other, after the sealing resin curing temperature gold (Au) and aluminum at the junction of the bonding wire, and the main component metal and aluminum at the rate of post-cure temperature at which the main metal components mutual diffusion of the electrode pads of the bonding wire at the junction of the electrode pads (Al) and gold (Au) on the ( Al) is characterized in that is less than the rate at which interdiffusion.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/60 | ....引线或其他导电构件的连接，用于工作时向或由器件传导电流 |