基本信息:
- 专利标题： 거리 센서 및 거리 화상 센서
- 专利标题（英）：Range sensor and range image sensor
- 专利标题（中）：范围传感器和范围图像传感器
- 申请号：KR1020127007104 申请日：2010-11-18
- 公开(公告)号：KR1020120109470A 公开(公告)日：2012-10-08
- 发明人： 마세미츠히토 , 스즈키다카시 , 야마자키도모히로
- 申请人： 하마마츠 포토닉스 가부시키가이샤
- 申请人地址： ****-*, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka, Japan
- 专利权人： 하마마츠 포토닉스 가부시키가이샤
- 当前专利权人： 하마마츠 포토닉스 가부시키가이샤
- 当前专利权人地址： ****-*, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka, Japan
- 代理人： 특허법인태평양
- 优先权： JPJP-P-2009-271825 2009-11-30
- 国际申请： PCT/JP2010/070564 2010-11-18
- 国际公布： WO2011065279 2011-06-03
- 主分类号： G01S17/10
- IPC分类号： G01S17/10 ; G01S17/89 ; G01S7/48 ; H01L27/146
Distance image sensor (1) is the light incident surface (1BK), and the light incident surface (1BK) and is having a surface (1FT) on the opposite side of the semiconductor substrate (1A), the photogate electrode (PG), the first and the second gate electrode (TX1, TX2), the first and second semiconductor areas (FD1, FD2), and having a third semiconductor region (SR1). The photo-gate electrode (PG) is provided on the surface (1FT). First and second gate electrodes (TX1, TX2) is provided adjacent to the photo gate electrode (PG). First and second semiconductor areas (FD1, FD2) is accumulating charge directly flows into the area beneath the lifting of the respective gate electrodes (TX1, TX2). A third semiconductor region (SR1) of the first and second semiconductor areas (FD1, FD2) is provided spaced apart from the light incident surface (1BK) side from the first and second semiconductor areas (FD1, FD2) and the challenge of reverse a type.
公开/授权文献:
- KR101679453B1 거리 센서 및 거리 화상 센서 公开/授权日：2016-11-24
信息查询:
EspacenetIPC结构图谱:
| G | 物理 |
| --G01 | 测量；测试 |
| ----G01S | 无线电定向；无线电导航；采用无线电波测距或测速；采用无线电波的反射或再辐射的定位或存在检测；采用其他波的类似装置 |
| ------G01S17/00 | 应用除无线电波外的电磁波的反射或再辐射系统，例如，激光雷达系统 |
| --------G01S17/02 | .应用除无线电波外的电磁波反射的系统 |
| ----------G01S17/06 | ..测定目标位置数据的系统 |
| ------------G01S17/08 | ...只用于测量距离 |
| --------------G01S17/10 | ....应用了断续的脉冲调制波的发射 |