基本信息:
- 专利标题： 갈륨 나이트라이드 결정, 호모에피택셜 갈륨 나이트라이드계 디바이스 및 이들의 제조 방법
- 专利标题（英）：Gallium nitride crystal, homoepitaxial gallium nitride-based devices and method for producing same
- 专利标题（中）：氮化钇晶体，基于氮化镓的器件及其制造方法
- 申请号：KR1020127015773 申请日：2003-12-22
- 公开(公告)号：KR1020120101078A 公开(公告)日：2012-09-12
- 发明人： 데블린마크필립 , 박동실 , 르뵈우프스티븐프란시스 , 로우랜드래리버톤 , 나랑크리스티진 , 홍후이콩 , 산드빅피터미카
- 申请人： 제너럴 일렉트릭 캄파니
- 申请人地址： * River Road, Schenectady, New York *****, U.S.A.
- 专利权人： 제너럴 일렉트릭 캄파니
- 当前专利权人： 제너럴 일렉트릭 캄파니
- 当前专利权人地址： * River Road, Schenectady, New York *****, U.S.A.
- 代理人： 제일특허법인
- 优先权： US10/329,981 2002-12-27; US10/329,982 2002-12-27
- 国际申请： PCT/US2003/041255 2003-12-22
- 国际公布： WO2004061923 2004-07-22
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C30B29/40 ; H01L29/812 ; H01L29/778
摘要：
A device which includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10 per cm , substantially no tilt boundaries, and an oxygen impurity level of less than 10 cm . The electronic device may be in the form of lighting applications such as light emitting diode (LED) and laser diode (LD) applications and devices such as GaN based transistors, rectifiers, thyristors, and cascode switches, and the like. Also provided is a method of forming a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10 per cm , substantially no tilt boundaries, and an oxygen impurity level of less than 10 cm , and homoepitaxially forming at least one semiconductor layer on the substrate and an. electronic device.
公开/授权文献:
- KR101284932B1 갈륨 나이트라이드 결정, 호모에피택셜 갈륨 나이트라이드계 디바이스 및 이들의 제조 방법 公开/授权日：2013-07-10
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |