基本信息:
- 专利标题： 탄화 규소 기판의 제조 방법
- 专利标题（英）：Method for producing silicon carbide substrate
- 专利标题（中）：碳化硅基板的制造方法
- 申请号：KR1020117029381 申请日：2010-09-28
- 公开(公告)号：KR1020120042753A 公开(公告)日：2012-05-03
- 发明人： 니시구치다로 , 사사키마코토 , 하라다신 , 오키타교코 , 이노우에히로키 , 나미카와야스오
- 申请人： 스미토모덴키고교가부시키가이샤
- 申请人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 代理人： 김태홍; 신정건
- 优先权： JPJP-P-2010-045623 2010-03-02
- 国际申请： PCT/JP2010/066829 2010-09-28
- 国际公布： WO2011108137 2011-09-09
- 主分类号： C30B29/36
- IPC分类号： C30B29/36 ; C30B33/06 ; H01L21/203
Support portion (30c) made of silicon carbide has a relief on at least a portion of the major surface (F0). Each rear surface of the at least one single crystal substrate 11 made of silicon carbide (B1) and the main surface (F0) support portion (30c) and at least one single crystal substrate 11 so as to contact each other relief is formed in the support portion (30c) are superimposed. If each of the one or more single crystal substrate 11 (B1) to the in order to bond the supporting portion (30c), the temperature of the support portion (30c) exceeds the sublimation temperature of silicon carbide, each of its temperature of one or more single-crystal substrate 11, the is less than the temperature of the support portion (30c), the support portion (30c) and at least one single crystal substrate 11 is heated so.