基本信息:
- 专利标题： 탄화규소 기판의 제조 방법, 반도체 장치의 제조 방법, 탄화규소 기판 및 반도체 장치
- 专利标题（英）：Process for production of silicon carbide substrate, process for production of semiconductor device, silicon carbide substrate, and semiconductor device
- 专利标题（中）：用于制造碳化硅基板的方法，用于制造半导体器件的方法，碳化硅衬底和半导体器件
- 申请号：KR1020127002622 申请日：2011-02-25
- 公开(公告)号：KR1020120038461A 公开(公告)日：2012-04-23
- 发明人： 니시구치다로 , 하라다신 , 이노우에히로키 , 사사키마코토
- 申请人： 스미토모덴키고교가부시키가이샤
- 申请人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人： 스미토모덴키고교가부시키가이샤
- 当前专利权人地址： 일본 오사카후 오사카시 쥬오쿠 기타하마 *쵸메 *반**고
- 代理人： 김태홍; 신정건
- 优先权： JPJP-P-2010-111977 2010-05-14
- 国际申请： PCT/JP2011/054341 2011-02-25
- 国际公布： WO2011142158 2011-11-17
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L29/78
SiC substrate in the production method of the SiC substrate according to the present invention can achieve a reduction in manufacturing cost of the semiconductor device, the step of the container 70, to prepare a SiC substrate 20 is made of a single crystal of silicon carbide using silicon carbide substrate in in the main surface (20B) step, a container 70 for placing the base substrate 10 so as to face the one side of 20, the base substrate 10, the sublimation of the silicon carbide constituting the base substrate 10 by heating to a temperature above the temperature range it includes a step of forming a base layer 10 made of silicon carbide so as to be in contact with the main surface (20B) of one side of the SiC substrate 20. Then, in the step of forming the base layer 10, into the container (70), SiC substrate 20 and the base substrate 10 and is separate from, silicon source (91) made of a material comprising silicon is placed .
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |