基本信息:
- 专利标题: 질화물 반도체 결정 및 그 제조 방법
- 专利标题(英):Nitride semiconductor crystal and method for manufacturing same
- 专利标题(中):氮化物半导体晶体及其制造方法
- 申请号:KR1020117028835 申请日:2010-05-31
- 公开(公告)号:KR1020120036816A 公开(公告)日:2012-04-18
- 发明人: 구보슈이치 , 시모야마겐지 , 기요미가즈마사 , 후지토겐지 , 미카와유타카
- 申请人: 미쓰비시 가가꾸 가부시키가이샤
- 申请人地址: *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人: 미쓰비시 가가꾸 가부시키가이샤
- 当前专利权人: 미쓰비시 가가꾸 가부시키가이샤
- 当前专利权人地址: *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人: 특허법인태평양
- 优先权: JPJP-P-2009-132264 2009-06-01; JPJP-P-2009-190070 2009-08-19
- 国际申请: PCT/JP2010/059199 2010-05-31
- 国际公布: WO2010140564 2010-12-09
- 主分类号: C30B29/38
- IPC分类号: C30B29/38 ; C30B25/18 ; C23C16/34 ; H01L21/205
In the nitride semiconductor crystal manufacturing method by growing a semiconductor layer on the seed substrate to obtain a nitride semiconductor crystal, the seed substrate includes a plurality of seed substrates of the same material, at least one of the plurality of seed substrates other seed substrates and off each Meanwhile, when sikyeoteul growing a single semiconductor layer on the plurality of seed substrates, the single one of the plurality off-angle distribution of the semiconductor layer is in the off semiconductor crystal production apparatus to be less than the angular distribution of the plurality of seed substrates nitride semiconductor crystal manufacturing method for growing the above single semiconductor layer by placing the seed substrate according to claim.