基本信息:
- 专利标题： 반도체 기판의 제조 방법 및 반도체 기판
- 专利标题（英）：Method for producing semiconductor substrate and semiconductor substrate
- 专利标题（中）：用于生产半导体衬底和半导体衬底的方法
- 申请号：KR1020117020771 申请日：2010-04-02
- 公开(公告)号：KR1020120003433A 公开(公告)日：2012-01-10
- 发明人： 니시까와,나오히로 , 나까노,츠요시 , 이노우에,다까유끼
- 申请人： 스미또모 가가꾸 가부시키가이샤
- 申请人地址： **-*, Shinkawa *-chome, Chuo-ku, Tokyo, Japan
- 专利权人： 스미또모 가가꾸 가부시키가이샤
- 当前专利权人： 스미또모 가가꾸 가부시키가이샤
- 当前专利权人地址： **-*, Shinkawa *-chome, Chuo-ku, Tokyo, Japan
- 代理人： 장수길; 이석재
- 优先权： JPJP-P-2009-093443 2009-04-07
- 国际申请： PCT/JP2010/002450 2010-04-02
- 国际公布： WO2010116701 2010-10-14
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/331 ; H01L29/737
The present invention provides a method of providing a suitable semiconductor substrate to form a plurality of different types of devices such as HBT and FET on a single semiconductor substrate. By repeating a plurality of steps including the step of introducing the first impurity gas containing groups or a compound having a first impurity atoms into the reaction vessel to the crystal growth of a semiconductor as a constituent element, there is provided a method of providing a plurality of the semiconductor substrate a first impurity after the step of introducing a gas, in a step of taking out the prepared semiconductor substrate, the method comprising: installing a first semiconductor in a bineung vessel and a reaction vessel, a first conductivity in the first impurity atom and the opposite in the semiconductor a first step of introducing a second impurity gas containing groups or a compound having a second impurity atom that represents the type as a component, and a step of heating the first semiconductor in an atmosphere of the second impurity gas and heating by the first semiconductor It provides a second method for manufacturing a semiconductor substrate comprising the steps of crystal growing a semiconductor on.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |