发明公开
KR1020120002556A 접착 필름이 부착된 반도체칩의 제조 방법 및 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
无效 - Rejected
基本信息:
- 专利标题： 접착 필름이 부착된 반도체칩의 제조 방법 및 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
- 专利标题（英）：Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
- 专利标题（中）：用粘合膜生产半导体芯片的方法，该方法中使用的半导体的粘合膜及其制造半导体器件的方法
- 申请号：KR1020117029600 申请日：2008-10-07
- 公开(公告)号：KR1020120002556A 公开(公告)日：2012-01-05
- 发明人： 하타케야마게이이치 , 나카무라유우키
- 申请人： 히타치가세이가부시끼가이샤
- 申请人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, ***-****, Japan
- 专利权人： 히타치가세이가부시끼가이샤
- 当前专利权人： 히타치가세이가부시끼가이샤
- 当前专利权人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, ***-****, Japan
- 代理人： 유미특허법인
- 优先权： JPJP-P-2007-263346 2007-10-09
- 国际申请： PCT/JP2008/068236 2008-10-07
- 国际公布： WO2009048060 2009-04-16
- 主分类号： H01L21/301
- IPC分类号： H01L21/301 ; H01L21/78 ; H01L21/52
The production method of the present invention the semiconductor chip is attached to the adhesive film for the semiconductor wafer, an adhesive film for a semiconductor and dicing tape (dicing tape) are laminated in that order, the adhesive film for a semiconductor is in the range of 1㎛ ~ 15㎛ has a thickness also to a have a tensile (引 張) breaking (破 斷) of less than 5% elongation the tensile breaking elongation is less than 110% of the elongation at the maximum load, the semiconductor wafer, laser light irradiation (照射) the step of the semiconductor wafer is formed by preparing a laminated body having a reforming section (改 質 部) for dividing into a plurality of semiconductor chips and a dicing tape was stretched in a direction in which the plurality of semiconductor chips spaced apart from each other in the semiconductor adhesive film is not split and the step of dividing the semiconductor wafer into a plurality of semiconductor chips, the adhesive film for a semiconductor by picking up the plurality of minute semiconductor chip in the stacking direction of the laminate And a step of obtaining a semiconductor chip with an adhesive film is attached to.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/301 | .....把半导体再细分成分离部分，例如分隔 |