基本信息:
- 专利标题: 반도체 기억 장치
- 专利标题(英):Semiconductor memory device
- 申请号:KR1020117022772 申请日:2005-06-03
- 公开(公告)号:KR1020110113215A 公开(公告)日:2011-10-14
- 发明人: 모리시따,후까시 , 아리모또,가즈따미
- 申请人: 르네사스 일렉트로닉스 가부시키가이샤
- 申请人地址: *-**, Toyosu *-chome, Koutou-ku, Tokyo, Japan
- 专利权人: 르네사스 일렉트로닉스 가부시키가이샤
- 当前专利权人: 르네사스 일렉트로닉스 가부시키가이샤
- 当前专利权人地址: *-**, Toyosu *-chome, Koutou-ku, Tokyo, Japan
- 代理人: 장수길; 이중희
- 优先权: JPJP-P-2004-170920 2004-06-09
- 国际申请: PCT/JP2005/010242 2005-06-03
- 国际公布: WO2005122244 2005-12-22
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L21/8242
The present invention can be produced by a MOS process, and furthermore to obtain a semiconductor memory device which can realize a stable operation for the purpose. Storage transistor has the impurity diffusion regions, a channel formation region, a charge storage node, a gate oxide film, a gate electrode. The gate electrode on the gate line, and the impurity diffusion region is connected to the source line, respectively. Storage transistors, and the state in which the holes accumulated in the charge storage node, and stores the respective data "1" and data "0" by occurring the state is not the hole accumulation. Access transistor has the impurity diffusion regions, a channel formation region, a gate oxide film, a gate electrode. Impurity diffusion region is connected to the bit line.
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
--------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的;包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
----------H01L27/04 | ..其衬底为半导体的 |
------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
--------------H01L27/105 | ....包含场效应组件的 |
----------------H01L27/108 | .....动态随机存取存储结构的 |