基本信息:
- 专利标题: FEOL 제조를 위한 인시튜 세정 챔버
- 专利标题(英):In-situ clean chamber for front end of line fabrication
- 专利标题(中):用于前线制造的现场清洁室
- 申请号:KR1020110090787 申请日:2011-09-07
- 公开(公告)号:KR1020110110746A 公开(公告)日:2011-10-07
- 发明人: 치엔테흐,카오 , 치우킨,스티브라이 , 요엘엠.,휴스톤 , 메이,창 , 유,창 , 위더블유.,왕 , 징페이,콘니초우 , 살,우모토이 , 손,트린흐 , 쟈오지옹,잔유안 , 징리앙,루 , 씨잉,판
- 申请人: 어플라이드 머티어리얼스, 인코포레이티드
- 申请人地址: **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 专利权人: 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人: 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人地址: **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 代理人: 남상선
- 优先权: US60/547,839 2004-02-26
- 主分类号: H01L21/205
- IPC分类号: H01L21/205
The present invention relates to a method and apparatus for removing native oxides from a substrate surface. In one aspect of the invention, the chamber includes a support assembly that is adapted to support the body part chamber, and the chamber being arranged at least in part on the substrate body. The support assembly includes one or more fluid channels that can be formed at least in part to the internal cooling of the substrate. The channel further comprises a lid assembly disposed on an upper surface portion chamber body. The lid assembly includes a first electrode and a second electrode, a plasma cavity is defined between these two electrodes, the second electrode is applied to heat the connection with the substrate.
公开/授权文献:
- KR101192099B1 FEOL 제조를 위한 인시튜 세정 챔버 公开/授权日:2012-10-17
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/20 | ....半导体材料在基片上的沉积,例如外延生长 |
----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的,即化学沉积 |