基本信息:
- 专利标题： 나노공진기 제조방법
- 专利标题（英）：Nano resonator and making method the same
- 专利标题（中）：纳米谐振器及其制作方法
- 申请号：KR1020100024800 申请日：2010-03-19
- 公开(公告)号：KR1020110105584A 公开(公告)日：2011-09-27
- 发明人： 전성찬 , 조준형 , 정영모 , 김환균 , 황석주
- 申请人： 연세대학교 산학협력단
- 申请人地址： 서울특별시 서대문구 연세로 ** (신촌동, 연세대학교)
- 专利权人： 연세대학교 산학협력단
- 当前专利权人： 연세대학교 산학협력단
- 当前专利权人地址： 서울특별시 서대문구 연세로 ** (신촌동, 연세대학교)
- 代理人： 특허법인(유)화우
- 主分类号： H01P7/00
- IPC分类号： H01P7/00 ; H01P7/08
The present invention relates to a nano-resonator and a manufacturing method, the nano-resonator is a silicon substrate serving as a base (10); Sacrificial layer 20 is deposited on the silicon substrate 10, an upper surface; The sacrificial layer 20, the resonance portion 30 to be deposited on the top surface; And the steps of comprising: a metal layer 40 to be deposited on the resonator portion 30, an upper surface, a manufacturing method is depositing a sacrificial layer 20 on the silicon substrate 10, an upper surface; Depositing a resonator layer 35 on the sacrificial layer 20, the upper surface; Applying a photoresist (37) in the resonant layer 35, the upper surface; Patterning the photoresist (37) on the resonator portion 30, the mask 39 is subjected to exposure in a lithography method resonator unit 30 to the shape of the through-shaped; Comprising the steps of: developing the patterned photoresist 37 is exposed to the resonance portion 30 the shape; Depositing a metal layer (40) to the resonance portion 30 the shape; Wherein the metal layer (40) to have a resonance cheungchak portion 30 shaped to completely remove the photoresist (37); And it is configured to include the step of performing etching for the metal layer 40, the resonator unit 30 and the sacrificial layer 20. Therefore, an effect is obtained such as to minimize the energy loss when the resonator is driven as well as to increase the operating efficiency and stability of the frequency characteristic of the resonator cavity.
公开/授权文献:
- KR101099646B1 나노공진기 제조방법 公开/授权日：2011-12-29