基本信息:
- 专利标题： 패턴 재료 제조 방법
- 专利标题（英）：Method for producing patterned materials
- 专利标题（中）：生产图案材料的方法
- 申请号：KR1020117015316 申请日：2009-12-03
- 公开(公告)号：KR1020110102394A 公开(公告)日：2011-09-16
- 发明人： 에르모쉬킨,알렉산더 , 쉬호르츠만,데렉 , 스프라구,자콥
- 申请人： 리퀴디아 테크놀로지스 인코포레이티드
- 申请人地址： *** Davis Drive, Suite ***, Morrisville, NC *****, U.S.A.
- 专利权人： 리퀴디아 테크놀로지스 인코포레이티드
- 当前专利权人： 리퀴디아 테크놀로지스 인코포레이티드
- 当前专利权人地址： *** Davis Drive, Suite ***, Morrisville, NC *****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US61/120,327 2008-12-05
- 国际申请： PCT/US2009/066595 2009-12-03
- 国际公布： WO2010065748 2010-06-10
- 主分类号： H01L21/027
- IPC分类号： H01L21/027
Large-area film pattern includes a first pattern region; Second pattern region; And comprising a joint for joining a first pattern area and the second area, the seam has a width of less than about 20 micrometers. Method for tiling a pattern region in advance of placing the predetermined thickness curable material; Subjecting the first portion of the curable material in contact with the mold; Curing the first portion of the curable material; Removing the mold from the cured first portion of the curable material; Step of the mold contacts the second portion of the curable material and the mold to be in contact also with a portion of the cured first portion of the curable material; Curing the second portion of the curable material; And removing the mold comprises the step of generating a joint having a size of less than about 20 micrometers between the cured second part of the cured first portion and the curable material of the curable material.
公开/授权文献:
- KR101690643B1 패턴 재료 제조 방법 公开/授权日：2016-12-28
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |