基本信息:
- 专利标题： 반도체 온 절연체 형태의 구조의 주변 링부분에서 산화물층을 용해하기 위한 공정
- 专利标题（英）：Process to dissolve the oxide layer in the peripheral ring of a structure of semiconductor-on-insulator type
- 专利标题（中）：在半导体绝缘体类型结构的外围环中分解氧化物层的方法
- 申请号：KR1020117015424 申请日：2009-12-30
- 公开(公告)号：KR1020110091587A 公开(公告)日：2011-08-11
- 发明人： 랑드뤼디디에 , 그리티파브리스 , 구트에릭 , 코논추크올레그 , 베티주크리스텔
- 申请人： 소이텍
- 申请人地址： Parc Technologique des Fontaines, Chemin des Franques, F-***** Bernin, France
- 专利权人： 소이텍
- 当前专利权人： 소이텍
- 当前专利权人地址： Parc Technologique des Fontaines, Chemin des Franques, F-***** Bernin, France
- 代理人： 정홍식
- 优先权： FR0950389 2009-01-22
- 国际申请： PCT/EP2009/068014 2009-12-30
- 国际公布： WO2010083933 2010-07-29
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/20
The present invention, the carrier substrate 1, oxide layer 2 and relates to a process for processing a structure of a semiconductor on insulator type comprising in succession the thin layers (3) of semiconductor material, the structure of the oxide layer (2) has a peripheral ringbubun (peripheral ring) is exposed, the process involves the application of the primary heat treatment in a neutral or controlled reducing atmosphere. The present invention prior to the main heat treatment, at least a peripheral covering the portion exposed of the oxide layer (2), this heat treatment is at least a semiconductor layer (3) a part of thin wherein the oxygen of the oxide layer (2) to run under the time and temperature conditions controlled to diffuse through, to control the reduction in the thickness of the oxide layer (2).
公开/授权文献:
- KR101373084B1 반도체 온 절연체 형태의 구조의 주변 링부분에서 산화물층을 용해하기 위한 공정 公开/授权日：2014-03-11