基本信息:
- 专利标题： 성장 기판을 제거한 직렬 연결 플립칩 ＬＥＤ
- 专利标题（英）：Series connected flip chip leds with growth substrate removed
- 专利标题（中）：系列连接的切片芯片，带有生长基板去除
- 申请号：KR1020117012834 申请日：2009-10-29
- 公开(公告)号：KR1020110086724A 公开(公告)日：2011-07-29
- 发明人： 크램스,마이클알. , 에플러,존이. , 슈타이거발트,다니엘에이. , 마르갈리트,탈
- 申请人： 루미레즈 엘엘씨 , 코닌클리케 필립스 엔.브이.
- 申请人地址： *** W. Trimble Road, San Jose, CA *****-****, U.S.A.
- 专利权人： 루미레즈 엘엘씨,코닌클리케 필립스 엔.브이.
- 当前专利权人： 루미레즈 엘엘씨,코닌클리케 필립스 엔.브이.
- 当前专利权人地址： *** W. Trimble Road, San Jose, CA *****-****, U.S.A.
- 代理人： 양영준; 백만기
- 优先权： US12/266,162 2008-11-06
- 国际申请： PCT/IB2009/054809 2009-10-29
- 国际公布： WO2010052622 2010-05-14
- 主分类号： H01L33/62
- IPC分类号： H01L33/62 ; H01L33/12 ; H01L27/15 ; H01L21/20
LED layers (18-22) are grown on a sapphire substrate. Bit individual LED flip chip are formed by ion implantation or the trenching mask. Module including a plurality of LED are diced and mounted on the submount wafer (44). The submount metal pattern or metal pattern formed on the LED causes the LED connected in series within the module. The growth substrate after laser lift-off or the like is removed. Is a semi-insulating layer is formed before or after the mounting, and the LED connected to each other mechanically. A semi-insulating layer can be formed by ion implantation of layer between the substrate and the LED layers. PEC etching of a semi-insulating layer exposed after the substrate removal can be done by biasing the semi-insulating layer. Then, the sub-mount is diced to produce the LED module comprising series-connected LED.
公开/授权文献:
- KR101632768B1 성장 기판을 제거한 직렬 연결 플립칩 ＬＥＤ 公开/授权日：2016-06-22