基本信息:
- 专利标题： 온도가 상승된 가스 주입이 이루어지는 화학적 기상 증착 방법 및 그 장치
- 专利标题（英）：Chemical vapor deposition with elevated temperature gas injection
- 专利标题（中）：化学蒸气沉积与高温气体注入
- 申请号：KR1020117012691 申请日：2009-11-06
- 公开(公告)号：KR1020110084285A 公开(公告)日：2011-07-21
- 发明人： 구래리알렉스 , 벨로소프미하일 , 미트로빅보얀
- 申请人： 비코 인스트루먼츠 인코포레이티드
- 申请人地址： * Terminal Drive, Plainview, NY *****, U.S.A.
- 专利权人： 비코 인스트루먼츠 인코포레이티드
- 当前专利权人： 비코 인스트루먼츠 인코포레이티드
- 当前专利权人地址： * Terminal Drive, Plainview, NY *****, U.S.A.
- 代理人： 유미특허법인
- 优先权： US12/291,350 2008-11-06
- 国际申请： PCT/US2009/063532 2009-11-06
- 国际公布： WO2010054184 2010-05-14
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
It discloses a chemical vapor deposition reactor and method. Ⅲ group metal source and Ⅴ group reactive gas such as a gas containing a metal source is introduced into the chamber 10 of the rotating disk reactor, is directed in the downward direction onto a wafer carrier 32 and the substrate 40, the substrate It is ⅲ-ⅴ group higher than about 400 ℃ for depositing a compound semiconductor and, typically is maintained at the elevated substrate temperature of about 700 to 1100 ℃. The gas is preferably and most preferably higher than about 75 ℃ is introduced into the reactor to an inlet temperature of about 100 to 350 ℃. The walls of the reactor portion may be a temperature close to the inlet temperature. With an elevated inlet temperature, it is possible to use a lower rotational speed, the higher the operating pressure, the lower the flow rate, or some combination of these in a wafer carrier.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积 |