基本信息:
- 专利标题: 고온 시트 조정 시스템 및 그 방법
- 专利标题(英):High temperature sheet handling system and methods
- 专利标题(中):高温处理系统与方法
- 申请号:KR1020117011441 申请日:2009-10-21
- 公开(公告)号:KR1020110084262A 公开(公告)日:2011-07-21
- 发明人: 록,윌리엄,이. , 니시모토,마이클,와이.
- 申请人: 코닝 인코포레이티드
- 申请人地址: One Riverfront Plaza, Corning, NY ***** U.S.A.
- 专利权人: 코닝 인코포레이티드
- 当前专利权人: 코닝 인코포레이티드
- 当前专利权人地址: One Riverfront Plaza, Corning, NY ***** U.S.A.
- 代理人: 청운특허법인
- 优先权: US12/256,865 2008-10-23
- 国际申请: PCT/US2009/061431 2009-10-21
- 国际公布: WO2010048254 2010-04-29
- 主分类号: H01L21/683
- IPC分类号: H01L21/683 ; H01L21/02
Method and apparatus of the present invention comprising: at least one Bernoulli chuck to control the distribution of the gas supplied to the tuned balance to provide the inlet and resisting the gas flow to the material sheet; And providing a gas stream to facilitate the separation of the release layer from the step, the donor semiconductor wafer to the gas flow increases the supply temperature of the gas to the at least one Bernoulli chuck to be provided at an elevated temperature of a material sheet on insulator substrate in order to accelerate the step, and separation of the insulator substrate and the support structure that provides one or more of the steps of: providing a gas stream to any of the support structure and the junction of the insulator substrate.