基本信息:
- 专利标题： ＣＶＤ 적용을 위한 챔버 구성요소
- 专利标题（英）：Chamber components for cvd applications
- 专利标题（中）：用于CVD应用的CHAMBER组件
- 申请号：KR1020117003315 申请日：2009-07-10
- 公开(公告)号：KR1020110036933A 公开(公告)日：2011-04-12
- 发明人： 힌클리,킴벌리 , 장,이젠 , 헤르난데즈,마누엘 , 방,원 , 루보미르스키,디미트리
- 申请人： 어플라이드 머티어리얼스, 인코포레이티드
- 申请人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US61/080,206 2008-07-11; US61/092,369 2008-08-27; US61/092,695 2008-08-28
- 国际申请： PCT/US2009/050282 2009-07-10
- 国际公布： WO2010006279 2010-01-14
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/02
The device to be used with the treatment chamber. In one aspect of the blocker plate, the comprises an annular plate having an inner portion of a first thickness, and the annular plate includes an opening pattern, the opening pattern, the central part; Concentrically (concentrically) it arranged around the central portion and the first patterned portion includes a first plurality of apertures having the opening of the first number; A first patterned disposed concentrically to the peripheral portion and the second pattern comprising a second plurality of openings having an opening of more than a second number of the number of openings of the first number of screen section; The peripheral portion is arranged concentrically around the second patterned portion; And elevated disposed around the annular plates (raised) it includes a concentric portion and a blocker plate includes an outer portion having a second thickness thicker than the first thickness of the central portion is provided. In another aspect, the second, third and fourth blocker plate is provided. The mixing apparatus and liquid evaporation apparatus to be used in the further processing chamber is provided.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积 |