基本信息:
- 专利标题： 기판 뒷면으로부터의 접근부를 구비한 마이크로메카닉 박막 구조의 제조 방법
- 专利标题（英）：Method for producing a micromechanical membrane structure with access from the rear of the substrate
- 专利标题（中）：用于生产从基板后面进入的微细膜结构的方法
- 申请号：KR1020107027656 申请日：2009-04-21
- 公开(公告)号：KR1020110025754A 公开(公告)日：2011-03-11
- 发明人： 크라머토르스텐 , 아알레스마르쿠스 , 그룬트만아르민 , 크네제카트린 , 벤첼후버트 , 슈에르만그레고르 , 아름브루스터지몬
- 申请人： 로베르트 보쉬 게엠베하
- 申请人地址： 독일 데-***** 스투트가르트 포스트파흐 ** ** **
- 专利权人： 로베르트 보쉬 게엠베하
- 当前专利权人： 로베르트 보쉬 게엠베하
- 当前专利权人地址： 독일 데-***** 스투트가르트 포스트파흐 ** ** **
- 代理人： 양영준; 안국찬
- 优先权： DE10 2008 002 3329 2008-06-10
- 国际申请： PCT/EP2009/054698 2009-04-21
- 国际公布： WO2009149980 2009-12-17
- 主分类号： B81C1/00
- IPC分类号： B81C1/00 ; B81B3/00 ; H01L21/02
The present invention relates to an advantageous method, especially if a simple and cost approach to fabricating a micro thin-film structure comprising a mechanic from the back of the substrate. This method is the basis of the p-doped Si substrate 1, and further comprising: n-doped with one or more of a series of grid-like regions (2) of the surface of the substrate, n-doped lattice structure (2) of the underlying substrate region 5 porous etching, n to produce a joint (7) on the doped lattice structure (2), the substrate region (5) of the lower, n first monocrystalline silicon on the doped lattice structure (2) the epitaxial layer ( and a step of growing a 8). The method, n the access portion opening 9 of the cavity 7 without opening the closure via one or more openings (6) has a first epitaxial layer (8) for the growth of the doped lattice structure (2) is designed to form an oxide layer 10 is created in the cavity wall, cavities (7) co-wall oxide layer (10) portion as the back access unit 13, the generation of a is used as an etch stop layer, this oxide layer 10 is characterized in that which is removed in the area of the cavity 7, since the cavity is created, access unit 13 back to the thin-film structure 14 formed on (7).
信息查询:
EspacenetIPC结构图谱:
| B | 作业；运输 |
| --B81 | 微观结构技术 |
| ----B81C | 专门适用于制造或处理微观结构的装置或系统的方法或设备 |
| ------B81C1/00 | 在基片内或其上制造或处理的装置或系统 |