基本信息:
- 专利标题: 단결정 제조장치
- 专利标题(英):Single crystal manufacturing apparatus
- 专利标题(中):单晶制造设备
- 申请号:KR1020107025943 申请日:2009-04-24
- 公开(公告)号:KR1020110018316A 公开(公告)日:2011-02-23
- 发明人: 아베,타카오 , 요코타,코우조우 , 미즈이시,코우지
- 申请人: 신에쯔 한도타이 가부시키가이샤
- 申请人地址: *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人: 신에쯔 한도타이 가부시키가이샤
- 当前专利权人: 신에쯔 한도타이 가부시키가이샤
- 当前专利权人地址: *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人: 특허법인씨엔에스
- 优先权: JPJP-P-2008-131637 2008-05-20
- 国际申请: PCT/JP2009/001888 2009-04-24
- 国际公布: WO2009141963 2009-11-26
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B15/02 ; H01L21/02
The present invention, the crucible 13, the main chamber 11 for receiving the hot zone components containing; Housing the single crystal (6) being pulled from the melt pool and a chamber for ejecting (12); In the single crystal production apparatus 10 according to a Czochralski method which comprises the single crystal production apparatus, intended to add to having a full chamber and the substitutable purpose chamber (2), the multi-purpose chamber (2), the crucible heating means for heating the filling material (L), after raising the single crystal cooling means (C) for cooling the hot zone components is a single crystal production apparatus 10 can be installed respectively. Accordingly, a large diameter, for example, improving the rate of operation of the single crystal manufacturing apparatus in the manufacture of about 200mm or more single crystals, there is provided a single crystal production apparatus which can improve the productivity of the single crystal.
公开/授权文献:
- KR101569711B1 단결정 제조장치 公开/授权日:2015-11-18