基本信息:
- 专利标题： 기판 에칭 시스템 및 프로세스의 방법 및 장치
- 专利标题（英）：Method and apparatus of a substrate etching system and process
- 专利标题（中）：基板蚀刻系统和工艺的方法和装置
- 申请号：KR1020107023432 申请日：2009-03-19
- 公开(公告)号：KR1020100128333A 公开(公告)日：2010-12-07
- 发明人： 파마티,샤마,브이. , 파,존,씨. , 시라주딘,칼리드 , 골드,에즈라,알. , 크루즈,제임스,피. , 올스제프스키,스코트 , 난고이,로이,씨. , 싱,사라브지트 , 부흐버거,더글라스에이. , 이,제리드,에이. , 장,춘레이
- 申请人： 어플라이드 머티어리얼스, 인코포레이티드
- 申请人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人： 어플라이드 머티어리얼스, 인코포레이티드
- 当前专利权人地址： **** Bowers Avenue, Santa Clara, CA *****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US61/038,664 2008-03-21; US61/040,570 2008-03-28; US61/094,820 2008-09-05
- 国际申请： PCT/US2009/037647 2009-03-19
- 国际公布： WO2009117565 2009-09-24
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
Embodiment of the invention relates to a substrate etching system and process. In one embodiment, the method is a step of etching the second layer of the substrate during the step of etching the first layer of the substrate for depositing a material on a substrate during the deposition process, the first etching process and the second etching process, and comprising, in this case the first bias power is applied to the substrate during a first etch process is applied to the substrate during a second bias voltage to the second etching process. In another embodiment, the system is quick gas changes between the first gas panel, and the second gas panel, and the chamber and the panel, and gas therefrom for supplying a second gas into the chamber for supplying a first gas into the chamber a may include a gas delivery system including a plurality of flow controller for directing the gas into the chamber to promote.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/306 | ......化学或电处理，例如电解腐蚀 |
| --------------------H01L21/3065 | .......等离子腐蚀；活性离子腐蚀 |