基本信息:
- 专利标题: EUVL용 광학 부재 및 그의 표면 처리 방법
- 专利标题(英):Optical member for euvl and surface treatment method thereof
- 专利标题(中):用于EUVL及其表面处理方法的光学部件
- 申请号:KR1020107014072 申请日:2008-09-30
- 公开(公告)号:KR1020100099208A 公开(公告)日:2010-09-10
- 发明人: 고이께아끼오 , 이와하시야스또미 , 기꾸가와신야 , 오까무라겐지
- 申请人: 아사히 가라스 가부시키가이샤
- 申请人地址: *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, JAPAN
- 专利权人: 아사히 가라스 가부시키가이샤
- 当前专利权人: 아사히 가라스 가부시키가이샤
- 当前专利权人地址: *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, JAPAN
- 代理人: 장수길; 이중희
- 优先权: JPJP-P-2007-336167 2007-12-27
- 国际申请: PCT/JP2008/068128 2008-09-30
- 国际公布: WO2009084296 2009-07-09
- 主分类号: G03F1/22
- IPC分类号: G03F1/22 ; G03F1/80 ; G03F1/00
2 를 함유하고 SiO
2 를 주성분으로 함유하는 실리카 유리 재료로 제조된다.
The invention ultrashort ultraviolet lithography (Extreme Ultra-Violet Lithography; EUVL) reflective mask used in the mirror or the like, is very excellent in the Figure, and the surface roughness of the flat of its optical surfaces, EUVL optical members which is suppressed chamfered portion chipping for to provide a. The invention optics for EUVL, comprising using a source gas (source gas) containing at least one of fluorine and chlorine to the optical surface of the optical member for EUVL embodiment the gas cluster ion beam (Gas Cluster Ion Beam) etching It relates to a method for surface treatment of the member, wherein the optical member is a OH concentration of more than 100 ppm is made of a silica glass material containing TiO
2 as a main component and containing SiO
2.
公开/授权文献:
- KR101419576B1 EUVL용 광학 부재 및 그의 표면 처리 방법 公开/授权日:2014-07-14