基本信息:
- 专利标题： 접착 필름이 부착된 반도체칩의 제조 방법, 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
- 专利标题（英）：Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
- 专利标题（中）：用粘合膜生产半导体芯片的方法，该方法中使用的半导体的粘合膜及其制造半导体器件的方法
- 申请号：KR1020107008476 申请日：2008-10-07
- 公开(公告)号：KR1020100061557A 公开(公告)日：2010-06-07
- 发明人： 하타케야마게이이치 , 나카무라유우키
- 申请人： 히타치가세이가부시끼가이샤
- 申请人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, ***-****, Japan
- 专利权人： 히타치가세이가부시끼가이샤
- 当前专利权人： 히타치가세이가부시끼가이샤
- 当前专利权人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, ***-****, Japan
- 代理人： 유미특허법인
- 优先权： JPJP-P-2007-263347 2007-10-09
- 国际申请： PCT/JP2008/068237 2008-10-07
- 国际公布： WO2009048061 2009-04-16
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/52 ; H01L21/304
摘要：
A method for producing a semiconductor chip with an adhesive film has a step for preparing a laminate of at least a divided semiconductor wafer, an adhesive film for semiconductor, and a dicing tape. The divided semiconductor wafer consists of a plurality of semiconductor chips obtained by forming cuts for fractionating the semiconductor wafer into a plurality of semiconductor chips with a depth smaller than the thickness of the semiconductor wafer on one side of the semiconductor wafer and grinding the other side of the semiconductor wafer where the cuts are not formed until the cuts are reached. The adhesive film for semiconductor has a thickness in the range of 1-15 μm, and a tensile fracture elongation of less than 5% which is less than 110% of elongation at the time of maximum load. The method also has a step for dividing the adhesive film for semiconductor by picking up the plurality of semiconductor chips in the laminating direction of each laminate and obtaining a semiconductor chip with an adhesive film.
摘要（中）：
制造具有粘合膜的半导体芯片的方法具有制备至少分割的半导体晶片，半导体用粘合膜和切割带的层叠体的工序。 分割的半导体晶片由通过形成用于将半导体晶片分级成多个半导体芯片的切割而获得的多个半导体芯片，其深度小于半导体晶片的一侧上的半导体晶片的厚度，并研磨另一侧 在达到切割之前不形成切口的半导体晶片。 半导体用粘合膜的厚度为1-15μm，拉伸断裂伸长率小于5％，小于最大载荷时伸长率的110％。 该方法还具有通过在各层压体的层叠方向上拾取多个半导体芯片并且获得具有粘合剂膜的半导体芯片来分割半导体用粘合膜的步骤。
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |