A method for manufacturing a capacitor is provided to prevent damages on a lower dielectric film by patterning an upper electrode containing nickel silicide using a wet-etching process. An interlayer dielectric is formed on a substrate(100). A lower electrode pattern(130) containing a metal is formed on the interlayer dielectric. A dielectric film is formed on the interlayer dielectric and the lower electrode pattern. An upper electrode pattern(142) containing NiSi, is formed on the dielectric film. At least a portion of the upper electrode pattern is formed to be opposed to the lower electrode pattern. The upper electrode pattern is formed by forming a polysilicon film on the dielectric film. The polysilicon film is partially removed, such that the dielectric film is partially exposed. A polysilicon film is formed to be at least partially opposed to the lower electrode pattern. A nickel film is formed on the polysilicon pattern and the dielectric film. The NiSi pattern is formed by performing an RTP(Rapid Thermal Process) on the resultant material. The remaining nickel film is removed using a wet etching process.