基本信息:
- 专利标题： 반도체 장치 및 그 제조 방법
- 专利标题（英）：Semiconductor device and manufacturing method thereof
- 专利标题（中）：半导体器件及其制造方法
- 申请号：KR1020070044458 申请日：2007-05-08
- 公开(公告)号：KR1020070109866A 公开(公告)日：2007-11-15
- 发明人： 야마모또아끼히또 , 오자와요시오
- 申请人： 가부시끼가이샤 도시바
- 申请人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 专利权人： 가부시끼가이샤 도시바
- 当前专利权人： 가부시끼가이샤 도시바
- 当前专利权人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 代理人： 장수길; 박충범; 이중희
- 优先权： JPJP-P-2006-00130340 2006-05-09
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247
摘要：
A semiconductor device and a manufacturing method of the same are provided to improve data holding characteristics of a non-volatile memory and to prevent size reduction of an EEPROM(Electrically Erasable Programmable Read Only Memory) due to thin thickness of IPD(Inter-Poly-Dielectric). A gate dielectric layer(2) is formed on at least one section of a surface of a semiconductor substrate(1). At least, one first gate electrode(3) is formed on the gate dielectric layer. An inter-electrode dielectric layer(6) is formed by coating a surface of the first gate electrode. At least, a layer thickness of a part covering a part other than a part which does not come into contact with the gate dielectric layer from among a plurality of corner parts of the first gate electrode is smaller than at least a layer thickness of a part covering the corner parts which does not come into contact with the gate dielectric layer. A second gate electrode(9) is formed to cover a surface of the inter-electrode dielectric layer.
摘要（中）：
提供了一种半导体器件及其制造方法，以改善非易失性存储器的数据保持特性，并且防止由于IPD的厚度（Poly-Poly- 电介质）。 栅电介质层（2）形成在半导体衬底（1）的表面的至少一个部分上。 至少在栅介质层上形成一个第一栅电极（3）。 通过涂覆第一栅电极的表面形成电极间电介质层（6）。 至少覆盖与第一栅电极的多个角部之间不与栅极电介质层接触的部分以外的部分的层的厚度小于至少一部分的层厚度 覆盖不与栅极介电层接触的角部。 第二栅电极（9）形成为覆盖电极间介电层的表面。
公开/授权文献:
- KR100952001B1 반도체 장치 및 그 제조 방법 公开/授权日：2010-04-08
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/112 | .....只读存储器结构的 |
| ------------------H01L27/115 | ......电动编程只读存储器 |