基本信息:
- 专利标题： 트랜지스터들 및 그 제조방법들
- 专利标题（英）：Transistors and fabrication methods thereof
- 专利标题（中）：晶体管及其制造方法
- 申请号：KR1020040009122 申请日：2004-02-11
- 公开(公告)号：KR1020050080940A 公开(公告)日：2005-08-18
- 发明人： 김동현 , 송두헌 , 이상현 , 서형원 , 원대중
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 박상수
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
The present invention provides a transistor and a method of manufacturing the same. This transistor and its manufacturing method are helps provide a method of doubling the current characteristics of the semiconductor device for driving the transistor. For this purpose, the transistors and a production method include the active region was isolated by trench insulating layer on the semiconductor substrate. Is formed so that the channel unit holes located in the semiconductor substrate below the active region. Filling the hole at the same time, the channel portion to form a line pattern disposed on the active region. And, it is arranged such that a channel region in a semiconductor substrate so as to be located below the line pattern. The channel region surrounds the lower portion be arranged such that the channel hole portion remote from the main surface of the semiconductor substrate. Through this, the semiconductor device having the transistor is provided by the current driving capability enhanced transistor allows to respond to the user's desire.
公开/授权文献:
- KR100593443B1 트랜지스터들 및 그 제조방법들 公开/授权日：2006-06-28
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/335 | .....场效应晶体管 |
| ------------------H01L21/336 | ......带有绝缘栅的 |